| Manufacturer | onsemi |
| Mfr. Part # | FGH60N60SMD |
| Package | TO-247-3 |
| Datasheet |
onsemi
FGH60N60SMD
|
| Description | 600W 120A 600V FS(Field Stop) TO-247-3 IGBT Transistors / Modules ROHS |
| Attribute | Value | Search |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.5V@15V,60A | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Power Dissipation (Pd) | 600W | |
| Diode Reverse Recovery Time (Trr) | 39ns | |
| Turn?off Delay Time (Td(off)) | 104ns | |
| Turn?off Switching Loss (Eoff) | 0.45mJ | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Type | FS(Field Stop) | |
| Turn?on Delay Time (Td(on)) | 18ns | |
| Total Gate Charge (Qg@Ic,Vge) | 189nC | |
| Collector Current (Ic) | 120A | |
| Input Capacitance (Cies@Vce) | - | |
| Turn?on Switching Loss (Eon) | 1.26mJ | |
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