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Home  >  Products  >  IGBT Transistors / Modules  >  onsemi SGL160N60UFDTU
onsemi SGL160N60UFDTU

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Manufacturer onsemi
Mfr. Part # SGL160N60UFDTU
Package TO-264-3
Datasheet onsemi SGL160N60UFDTU
Description 250W 160A 600V TO-264-3 IGBT Transistors / Modules ROHS
Specifications
Attribute Value Search
Gate-Emitter Threshold Voltage (Vge(th)@Ic) 2.6V@15V,80A
Operating Temperature -55℃~+150℃@(Tj)
Power Dissipation (Pd) 250W
Diode Reverse Recovery Time (Trr) 95ns
Turn?off Delay Time (Td(off)) 90ns
Turn?off Switching Loss (Eoff) 1.76mJ
Collector-Emitter Breakdown Voltage (Vces) 600V
Type -
Turn?on Delay Time (Td(on)) 40ns
Total Gate Charge (Qg@Ic,Vge) 345nC
Collector Current (Ic) 160A
Input Capacitance (Cies@Vce) -
Turn?on Switching Loss (Eon) 2.5mJ
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