| Manufacturer | Diodes Incorporated |
| Mfr. Part # | DGTD65T50S1PT |
| Package | TO-247-3 |
| Datasheet |
Diodes Incorporated
DGTD65T50S1PT
|
| Description | 375W 100A 650V FS(Field Stop) TO-247-3 IGBT Transistors / Modules ROHS |
| Attribute | Value | Search |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.4V@15V,50A | |
| Operating Temperature | - | |
| Power Dissipation (Pd) | 375W | |
| Diode Reverse Recovery Time (Trr) | 80ns | |
| Turn?off Delay Time (Td(off)) | 328ns | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Type | FS(Field Stop) | |
| Turn?on Delay Time (Td(on)) | 58ns | |
| Total Gate Charge (Qg@Ic,Vge) | 287nC | |
| Collector Current (Ic) | 100A | |
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