| Manufacturer | Diodes Incorporated |
| Mfr. Part # | DGTD65T40S2PT |
| Package | TO-247-3 |
| Datasheet |
Diodes Incorporated
DGTD65T40S2PT
|
| Description | 230W 80A 650V FS(Field Stop) TO-247-3 IGBT Transistors / Modules ROHS |
| Attribute | Value | Search |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.3V@15V,40A | |
| Operating Temperature | - | |
| Power Dissipation (Pd) | 230W | |
| Diode Forward Voltage (Vf@If) | 1.5V@20A | |
| Diode Reverse Recovery Time (Trr) | 60ns | |
| Turn?off Delay Time (Td(off)) | 55ns | |
| Turn?off Switching Loss (Eoff) | 0.4mJ | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge) | 1.8V@40A,15V | |
| Type | FS(Field Stop) | |
| Turn?on Delay Time (Td(on)) | 6ns | |
| Total Gate Charge (Qg@Ic,Vge) | 60nC | |
| Collector Current (Ic) | 80A | |
| Input Capacitance (Cies@Vce) | 1.565nF@25V | |
| Turn?on Switching Loss (Eon) | 0.5mJ | |
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