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Home  >  Products  >  IGBT Transistors / Modules  >  Diodes Incorporated DGTD120T25S1PT
Diodes Incorporated DGTD120T25S1PT

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Manufacturer Diodes Incorporated
Mfr. Part # DGTD120T25S1PT
Package TO-247-3
Datasheet Diodes Incorporated DGTD120T25S1PT
Description 348W 50A 1.2kV FS(Field Stop) TO-247-3 IGBT Transistors / Modules ROHS
Specifications
Attribute Value Search
Gate-Emitter Threshold Voltage (Vge(th)@Ic) 2.4V@15V,25A
Operating Temperature -
Power Dissipation (Pd) 348W
Diode Reverse Recovery Time (Trr) 100ns
Turn?off Delay Time (Td(off)) 269ns
Turn?off Switching Loss (Eoff) 0.55mJ
Collector-Emitter Breakdown Voltage (Vces) 1.2kV
Type FS(Field Stop)
Turn?on Delay Time (Td(on)) 73ns
Total Gate Charge (Qg@Ic,Vge) 204nC
Collector Current (Ic) 50A
Input Capacitance (Cies@Vce) -
Turn?on Switching Loss (Eon) 1.44mJ
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