| Manufacturer | STMicroelectronics |
| Mfr. Part # | STGP19NC60KD |
| Package | TO-220 |
| Datasheet |
STMicroelectronics
STGP19NC60KD
|
| Description | 125W 35A 600V TO-220 IGBT Transistors / Modules ROHS |
| Attribute | Value | Search |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.75V@15V,12A | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Power Dissipation (Pd) | 125W | |
| Diode Reverse Recovery Time (Trr) | 31ns | |
| Turn?off Delay Time (Td(off)) | 105ns | |
| Turn?off Switching Loss (Eoff) | 0.255mJ | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Type | - | |
| Turn?on Delay Time (Td(on)) | 30ns | |
| Total Gate Charge (Qg@Ic,Vge) | 55nC | |
| Collector Current (Ic) | 35A | |
| Input Capacitance (Cies@Vce) | - | |
| Turn?on Switching Loss (Eon) | 0.165mJ | |
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